AlGaInP LED Chip Sepcification
Orange LED Wafer
Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR
n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip
Sepcification (Base on 7mil*7mil chips)
Parameter
Chip Size
7mil(±1mil)*7mil(±1mil)
Thickness
7mil(±1mil)
P Electrode
U/L
N Electrode
AU
Structure
Such as
right-shown
·Optical-elctric
characters
Parameter
Condition
Min.
Typ
Max.
Unit
Forward voltage
If=10μA
1.35
┄
┄
V
Reverse voltage
If=20mA
┄
┄
2.2
V
Reverse current
V=10V
┄
┄
2
μm
Wavelength
If=20mA
565
┄
575
nm
Half wave width
If=20mA
┄
10
┄
nm
·Light intensity
characters
Brightness code
LA
LB
LC
LD
LE
LF
LG
LH
IV(mcd)
10—15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
Source: semiconductorwafers.net
For more information, please visit our website:http://www.semiconductorwafers.net,
send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.