Home / News /

Yellow-Green AlGaInP/GaAs LED wafer:565-575nm

News

Yellow-Green AlGaInP/GaAs LED wafer:565-575nm

2017-08-03

AlGaInP LED Chip Sepcification


Orange LED Wafer Substrate:

P+GaAs

p-GaP

p-AlGaInP

MQW

n-AlGaInP

DBR n-ALGaAs/AlAs

Buffer

GaAs substrate




·Chip Sepcification (Base on 7mil*7mil chips)

Parameter

Chip Size

7mil(±1mil)*7mil(±1mil)

Thickness

7mil(±1mil)

P Electrode

U/L

N Electrode

AU

Structure

Such as right-shown


·Optical-elctric characters

Parameter

Condition

Min.

Typ

Max.

Unit

Forward voltage

If=10μA

1.35

V

Reverse voltage

If=20mA

2.2

V

Reverse current

V=10V

2

μm

Wavelength

If=20mA

565

575

nm

Half wave width

If=20mA

10

nm


·Light intensity characters

Brightness code

LA

LB

LC

LD

LE

LF

LG

LH

IV(mcd)

10—15

15-20

20-25

25-30

30-35

35-40

40-50

50-60


Source: semiconductorwafers.net


For more information, please visit our website:http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.







Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
Contact Us Contact Us 
If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.