GaAs Wafer
Substrate - Gallium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type
Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
GaAs
USD -100.00
USD 25.40
4000±50
DSP
>1E7
Undoped
N/A
N/A
<1E5
1-100
GaAs
USD -100.00
USD 50.70
350-370
SSP
>1E7
Undoped
N/A
>3500
<10000
1-100
GaAs
(100)2°±0.50
off toward (011)
USD 50.70
350±10
SSP
(0.8-9)E-3
N/Si
(8)E17
2000-3000
<5000
1-100
GaAs
(100)6°±0.50
off toward (011)
USD 50.70
350±20
SSP
(0.8-9)×10-3
N/Si
(0.2-4)E18
≥1000
≤5000
1-100
GaAs
USD -100.00
USD 50.80
USD 350.00
SSP
N/A
P/Zn
(1-5)E19
N/A
<5000
1-100
GaAs
USD -100.00
USD 50.80
5000±50
SSP
>1E8
Undoped
N/A
N/A
N/A
1-100
GaAs
USD -100.00
USD 50.80
4000±50
SSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
USD -100.00
USD 50.80
8000±10
As cut
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
USD -100.00
USD 50.80
8000±10
DSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°
USD 50.80
USD 3,000.00
SSP
>1E7
N/Si
N/A
N/A
N/A
1-100
GaAs
USD -100.00
USD 50.80
350±25
SSP
>1E7
N/A
(1-5)E19
N/A
N/A
1-100
GaAs
USD -100.00
USD 50.80
350±25
SSP
N/A
N/A
(0.4-3.5)E18
≥1400
≤100
1-100
GaAs
(100)0°or 2°
USD 76.20
130±20
DSP
N/A
Undoped
N/A
N/A
<10000
1-100
GaAs
(100)2°±0.50
USD 76.20
350±25
SSP
N/A
N/Si
(0.4-2.5)E18
N/A
≤5000
1-100
GaAs
USD -100.00
USD 76.20
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaAs
USD -100.00
USD 76.20
350±25
SSP
>1E7
Undoped
N/A
N/A
≤8E4 or 1E4
1-100
GaAs
USD -100.00
USD 76.20
625±25
DSP
>1E7
Undoped
N/A
≥4500
≤8E4 or 1E4
1-100
GaAs
(100)2°±0.10
off toward(110)
USD 76.20
USD 500.00
SSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°
USD 100.00
USD 625.00
DSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°
USD 100.00
625±25
DSP
N/A
N/A
N/A
N/A
N/A
1-100
GaAs
(100)2°±0.50
off toward (011)
USD 100.00
350±25
SSP
N/A
N/Si
(0.4-3.5)E18
N/A
≤5000
1-100
GaAs
(100)2°±0.10
off toward (110)
USD 100.00
625±25
DSP
(1-4)E18
Undoped
N/A
N/A
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