We provide InGaAsP/InGaAs epi on InP substrates as follows:

1.Structure: 1.55um InGaAsP QW laser

2.Specification:

1)   Method: MOCVD

2)   Size of wafer: 2”

3)   InGaAsP/InGaAs  growth on InP substrates

4)   3-5 types of InGaAsP composition

5)   PL tolerance of +/- 5nm, PL std. dev. <3nm across the wafer (with an exclusion zone of 5mm from the wafer circumference)

6)   PL target range 1500nm.

7)   Strain target -1.0% +/- 0.1% (compressive strain)

8)    No. of layers: 8-20

9)   Total growth thickness: 1.0~3.0um

10)   Parameters to be measured: X-Ray Diffraction Measurement (thickness, strain), Photoluminescence Spectrum (PL, PL uniformity), Carrier Concentration Profiling

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (∆T) set-up. The InGaAs-based materials show a positive ∆T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ∆T consistent with a two-photon absorption process.

Source: semiconductorwafers.net

For more information, please visit our website:http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.