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InGaAsN epitaxially on GaAs or InP wafers

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InGaAsN epitaxially on GaAs or InP wafers

2017-10-09

PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:

Layer

Doping

Thickness (um)

 Remark

GaAs

 undoped

~500

wafer substrate

InGaAsN*

  undoped

0.150

band gap <1 eV

Al(0.3)Ga(0.7)As

 undoped

0.5

GaAs

            undoped

2

Al(0.3)Ga(0.7)As

  undoped

0.5

ITEM

x/y

Doping

carrier conc.(cm3)

Thicknessum

wave length(um)

Lattice mismatch

InAs(y)P

0.25

none

5.0*10^16

1.0

-

In(x)GaAs

0.63

none

1.0*10^17

3.0

1.9

600<>600

InAs(y)P

0.25

S

1.0*10^18

205.0

-

InAs(y)P

0.05->0.25

S

1.0*10^18

4.0

-

InP

-

S

1.0*10^18

0.3

-

Substrate:InP

S

(1-3)*10^18

~350

-


Source:PAM-XIAMEN


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