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Gallium Semiconductor Wafer

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Gallium Semiconductor Wafer

2017-12-21

Gallium Semiconductor Wafer

GaAs Wafer Substrate - Gallium Arsenide
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type   Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2
1-100 GaAs -100 25.4 4000±50 DSP >1E7 Undoped N/A N/A <1E5
1-100 GaAs -100 50.7 350-370 SSP >1E7 Undoped N/A >3500 <10000
1-100 GaAs (100)2°±0.50 off toward (011) 50.7 350±10 SSP (0.8-9)E-3 N/Si (8)E17 2000-3000 <5000
1-100 GaAs (100)6°±0.50 off toward (011) 50.7 350±20 SSP (0.8-9)×10-3 N/Si (0.2-4)E18 ≥1000 ≤5000
1-100 GaAs -100 50.8 350 SSP N/A P/Zn (1-5)E19 N/A <5000
1-100 GaAs -100 50.8 5000±50 SSP >1E8 Undoped N/A N/A N/A
1-100 GaAs -100 50.8 4000±50 SSP >1E7 Undoped N/A N/A N/A
1-100 GaAs -100 50.8 8000±10 As cut >1E7 Undoped N/A N/A N/A
1-100 GaAs -100 50.8 8000±10 DSP >1E7 Undoped N/A N/A N/A
1-100 GaAs (100)2° 50.8 3000 SSP >1E7 N/Si N/A N/A N/A
1-100 GaAs -100 50.8 350±25 SSP >1E7 N/A (1-5)E19 N/A N/A
1-100 GaAs -100 50.8 350±25 SSP N/A N/A (0.4-3.5)E18 ≥1400 ≤100
1-100 GaAs (100)0°or 2° 76.2 130±20 DSP N/A Undoped N/A N/A <10000
1-100 GaAs (100)2°±0.50 76.2 350±25 SSP N/A N/Si (0.4-2.5)E18 N/A ≤5000
1-100 GaAs -100 76.2 350±25 SSP N/A N/A N/A N/A N/A
1-100 GaAs -100 76.2 350±25 SSP >1E7 Undoped N/A N/A ≤8E4 or 1E4
1-100 GaAs -100 76.2 625±25 DSP >1E7 Undoped N/A ≥4500 ≤8E4 or 1E4
1-100 GaAs (100)2°±0.10 off toward(110) 76.2 500 SSP >1E7 Undoped N/A N/A N/A
1-100 GaAs (100)2° 100 625 DSP >1E7 Undoped N/A N/A N/A
1-100 GaAs (100)2° 100 625±25 DSP N/A N/A N/A N/A N/A
1-100 GaAs (100)2°±0.50 off toward (011) 100 350±25 SSP N/A N/Si (0.4-3.5)E18 N/A ≤5000
1-100 GaAs (100)2°±0.10 off toward (110) 100 625±25 DSP (1-4)E18 Undoped N/A N/A N/A
1-100 GaAs (100)2°±0.50 off toward (011) 100 625±25 DSP (1.0-4.0)1E8 Undoped N/A N/A N/A
1-100 GaAs (100)2°±0.50 off toward (011) 100 625±25 DSP (1-4)E8 Undoped N/A N/A N/A
1-100 GaAs (100)2°±0.50 off toward (011) 100 350±25 SSP N/A N/Si (0.4-4)E18 N/A ≤5000
1-100 GaAs (100)15°±0.50 off toward (011) 100 350±25 SSP N/A N/Si (0.4-4)E18 N/A ≤5000
1-100 GaAs (100)2°±0.50 100 350±25 DSP N/A N/Si (0.4-4)E18 N/A ≤5000
1-100 GaAs (100)2°±0.50 100 625±25 SSP (1-4)E18 Undoped N/A N/A N/A
1-100 GaAs (100)2°±0.50 150 675±25 DSP >1E7 Undoped N/A N/A N/A
1-100 GaAs (100)0°±3.0° 150 675±25 DSP >1.0×107 Undoped N/A N/A N/A
1-100 GaAs -310 50.8/76.2 N/A N/A N/A N/A N/A N/A N/A
As a GaAs wafer supplier,we offer GaAs semiconductor list for your reference, if you need price detail, please contact our sales team


Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.*** We offer GaAs epitaxy service by MBE and MOCVD, please contact with our sales team.

GaSb Wafer Substrate - Gallium Antimonide
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2
1-100 GaSb (100)±0.5 50.8 500±25 SSP N/A Te 1E17 - 5E18 N/A < 1000
1-100 GaSb (111)A±0.5 50.8 500±25 SSP N/A Te 1E17 - 5E18 N/A < 1000
1-100 GaSb (111)B 50.8 N/A N/A N/A Te (5-8)E17 N/A N/A
1-100 GaSb (111)B 50.8 N/A N/A N/A Undoped none N/A N/A
1-100 GaSb (100)±0.5 50.8 500 SSP N/A P/ (1-5)E17cm-3 N/A N/A
1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/ (1-5)E17cm-3 N/A N/A
1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/Te (1-8)E17/(2-7)E16 N/A < 1000
1-100 GaSb -100 50.8 450±25 SSP N/A N/A (1-1.2)E17 N/A N/A
1-100 GaSb -100 50.8 350±25 SSP N/A N/A N/A N/A N/A
1-100 GaSb -100 76.8 500-600 N/A N/A Undoped none N/A N/A
1-100 GaSb -100 100 800±25 DSP N/A P/Zn N/A N/A N/A
1-100 GaSb -100 100 250±25 N/A N/A P/ZnO N/A N/A N/A

As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team


Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

GaP Wafer Substrate- Gallium Posphide
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2
1-100 GaP -111 50 5000 ± 20 SSP N/A N N/A N/A N/A
1-100 GaP (111)±0.5° 50±0.5 300 ± 20 N/A N/A S (2~7)×1E17 ≥100 <3×1E5
1-100 GaP (111)±0.5° 50±0.5 300 ± 20 N/A N/A Te (1~2)×1E17 ≥100 <3×1E5

As a GaP wafer supplier,we offer GaP semiconductor list for your reference, if you need price detail, please contact our sales team


Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.




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