Gallium Semiconductor Wafer
| GaAs Wafer Substrate - Gallium Arsenide | ||||||||||
| Quantity | Material | Orientation. | Diameter | Thickness | Polish | Resistivity | Type Dopant | Nc | Mobility | EPD |
| PCS | (mm) | (μm) | Ω·cm | a/cm3 | cm2/Vs | /cm2 | ||||
| 1-100 | GaAs | -100 | 25.4 | 4000±50 | DSP | >1E7 | Undoped | N/A | N/A | <1E5 |
| 1-100 | GaAs | -100 | 50.7 | 350-370 | SSP | >1E7 | Undoped | N/A | >3500 | <10000 |
| 1-100 | GaAs | (100)2°±0.50 off toward (011) | 50.7 | 350±10 | SSP | (0.8-9)E-3 | N/Si | (8)E17 | 2000-3000 | <5000 |
| 1-100 | GaAs | (100)6°±0.50 off toward (011) | 50.7 | 350±20 | SSP | (0.8-9)×10-3 | N/Si | (0.2-4)E18 | ≥1000 | ≤5000 |
| 1-100 | GaAs | -100 | 50.8 | 350 | SSP | N/A | P/Zn | (1-5)E19 | N/A | <5000 |
| 1-100 | GaAs | -100 | 50.8 | 5000±50 | SSP | >1E8 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | -100 | 50.8 | 4000±50 | SSP | >1E7 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | -100 | 50.8 | 8000±10 | As cut | >1E7 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | -100 | 50.8 | 8000±10 | DSP | >1E7 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2° | 50.8 | 3000 | SSP | >1E7 | N/Si | N/A | N/A | N/A |
| 1-100 | GaAs | -100 | 50.8 | 350±25 | SSP | >1E7 | N/A | (1-5)E19 | N/A | N/A |
| 1-100 | GaAs | -100 | 50.8 | 350±25 | SSP | N/A | N/A | (0.4-3.5)E18 | ≥1400 | ≤100 |
| 1-100 | GaAs | (100)0°or 2° | 76.2 | 130±20 | DSP | N/A | Undoped | N/A | N/A | <10000 |
| 1-100 | GaAs | (100)2°±0.50 | 76.2 | 350±25 | SSP | N/A | N/Si | (0.4-2.5)E18 | N/A | ≤5000 |
| 1-100 | GaAs | -100 | 76.2 | 350±25 | SSP | N/A | N/A | N/A | N/A | N/A |
| 1-100 | GaAs | -100 | 76.2 | 350±25 | SSP | >1E7 | Undoped | N/A | N/A | ≤8E4 or 1E4 |
| 1-100 | GaAs | -100 | 76.2 | 625±25 | DSP | >1E7 | Undoped | N/A | ≥4500 | ≤8E4 or 1E4 |
| 1-100 | GaAs | (100)2°±0.10 off toward(110) | 76.2 | 500 | SSP | >1E7 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2° | 100 | 625 | DSP | >1E7 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2° | 100 | 625±25 | DSP | N/A | N/A | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2°±0.50 off toward (011) | 100 | 350±25 | SSP | N/A | N/Si | (0.4-3.5)E18 | N/A | ≤5000 |
| 1-100 | GaAs | (100)2°±0.10 off toward (110) | 100 | 625±25 | DSP | (1-4)E18 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2°±0.50 off toward (011) | 100 | 625±25 | DSP | (1.0-4.0)1E8 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2°±0.50 off toward (011) | 100 | 625±25 | DSP | (1-4)E8 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2°±0.50 off toward (011) | 100 | 350±25 | SSP | N/A | N/Si | (0.4-4)E18 | N/A | ≤5000 |
| 1-100 | GaAs | (100)15°±0.50 off toward (011) | 100 | 350±25 | SSP | N/A | N/Si | (0.4-4)E18 | N/A | ≤5000 |
| 1-100 | GaAs | (100)2°±0.50 | 100 | 350±25 | DSP | N/A | N/Si | (0.4-4)E18 | N/A | ≤5000 |
| 1-100 | GaAs | (100)2°±0.50 | 100 | 625±25 | SSP | (1-4)E18 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)2°±0.50 | 150 | 675±25 | DSP | >1E7 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | (100)0°±3.0° | 150 | 675±25 | DSP | >1.0×107 | Undoped | N/A | N/A | N/A |
| 1-100 | GaAs | -310 | 50.8/76.2 | N/A | N/A | N/A | N/A | N/A | N/A | N/A |
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.*** We offer GaAs epitaxy service by MBE and MOCVD, please contact with our sales team.
| GaSb Wafer Substrate - Gallium Antimonide | ||||||||||
| Quantity | Material | Orientation. | Diameter | Thickness | Polish | Resistivity | Type Dopant | Nc | Mobility | EPD |
| PCS | (mm) | (μm) | Ω·cm | a/cm3 | cm2/Vs | /cm2 | ||||
| 1-100 | GaSb | (100)±0.5 | 50.8 | 500±25 | SSP | N/A | Te | 1E17 - 5E18 | N/A | < 1000 |
| 1-100 | GaSb | (111)A±0.5 | 50.8 | 500±25 | SSP | N/A | Te | 1E17 - 5E18 | N/A | < 1000 |
| 1-100 | GaSb | (111)B | 50.8 | N/A | N/A | N/A | Te | (5-8)E17 | N/A | N/A |
| 1-100 | GaSb | (111)B | 50.8 | N/A | N/A | N/A | Undoped | none | N/A | N/A |
| 1-100 | GaSb | (100)±0.5 | 50.8 | 500 | SSP | N/A | P/ | (1-5)E17cm-3 | N/A | N/A |
| 1-100 | GaSb | (100)±0.5 | 50.8 | 500 | SSP | N/A | N/ | (1-5)E17cm-3 | N/A | N/A |
| 1-100 | GaSb | (100)±0.5 | 50.8 | 500 | SSP | N/A | N/Te | (1-8)E17/(2-7)E16 | N/A | < 1000 |
| 1-100 | GaSb | -100 | 50.8 | 450±25 | SSP | N/A | N/A | (1-1.2)E17 | N/A | N/A |
| 1-100 | GaSb | -100 | 50.8 | 350±25 | SSP | N/A | N/A | N/A | N/A | N/A |
| 1-100 | GaSb | -100 | 76.8 | 500-600 | N/A | N/A | Undoped | none | N/A | N/A |
| 1-100 | GaSb | -100 | 100 | 800±25 | DSP | N/A | P/Zn | N/A | N/A | N/A |
| 1-100 | GaSb | -100 | 100 | 250±25 | N/A | N/A | P/ZnO | N/A | N/A | N/A |
As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
| GaP Wafer Substrate- Gallium Posphide | ||||||||||
| Quantity | Material | Orientation. | Diameter | Thickness | Polish | Resistivity | Type Dopant | Nc | Mobility | EPD |
| PCS | (mm) | (μm) | Ω·cm | a/cm3 | cm2/Vs | /cm2 | ||||
| 1-100 | GaP | -111 | 50 | 5000 ± 20 | SSP | N/A | N | N/A | N/A | N/A |
| 1-100 | GaP | (111)±0.5° | 50±0.5 | 300 ± 20 | N/A | N/A | S | (2～7)×1E17 | ≥100 | <3×1E5 |
| 1-100 | GaP | (111)±0.5° | 50±0.5 | 300 ± 20 | N/A | N/A | Te | (1～2)×1E17 | ≥100 | <3×1E5 |
As a GaP wafer supplier,we offer GaP semiconductor list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
