We can offer 2" GaAs/AlGaAs/GaAs epi wafer, please see below typical structure:
S.No |
Parameters |
Specifications |
1 |
GaAs substrate layer thickness |
500μm |
2 |
layer thickness |
2μm |
3 |
GaAs top layer thickness |
220 nm |
4 |
Mole fraction of Al (x) |
0.7 |
5 |
Doping level |
Intrinsic |
Source: semiconductorwafers.net
For more information, please visit our website:http://www.semiconductorwafers.net,
send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.