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AlGaInP epi wafer

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AlGaInP epi wafer

2017-08-01

AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.


AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.



Specs of AlGaInP wafers on chips


AlGaInP LED Wafer for chip

Item No.:PAM-CAYG1101


Dimensions:

Growth Technique – MOCVD

Substrate Material: Gallium arsenide

Substrate Conduction: n type

Diameter:2"


●Chip Dimensions:

1)Chip size:front size:8mil(±1mil)×8mil(±1mil)

back side:9mil(±1mil)×9mil(±1mil)

2)Chip thickness:7mil(±1mil)

3)Pad size:4mil(±0.5mil)

4)Structure:see 1-1


●Photoelectric Properties

Parameter

Condition

Min.

Typ.

Max.

Unit

Forward VoltageVf1

If=10μA

1.35

V

Forward VoltageVf2

If=20mA

2.2

V

Reverse VoltageLr

Vr=10V

2

μA

Dominant wavelengthλd)

If=20mA

565

575

nm

FWHMΔλ

If=20mA

10

nm


●Luminous Intensity:

Code

LC

LD

LE

LF

LG

LH

LI

IV(mcd)

20-30

25-35

30-35

35-50

40-60

50-70

60-80


Band gap of strained AlGaInP on GaAs substrate


In this tutorial we want to study the band gaps of strained AlxGayIn1-x-yP on a GaAs substrate.

The material parameters are taken from

Band parameters for III-V compound semiconductors and their alloys

I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan

J. Appl. Phys. 89 (11), 5815 (2001)


To understand the effect of strain on the band gap on the individual components of this quaternary, we first examine the effects on

1)AlP

strained tensilely

with respect to GaAs

2)GaP

strained tensilely

with respect to GaAs

3)InP

strained compressively

with respect to GaAs

4)AlxGa1-xP

strained tensilely

with respect to GaAs

5)GaxIn1-xP

strained

with respect to GaAs

6)AlxIn1-xP

strained

with respect to GaAs

7)Al0.4Ga0.6P

strained tensilely

with respect to GaAs

8)Ga0.4In0.6P

strained compressively

with respect to GaAs

9)Al0.4In0.6P

strained compressively

with respect to GaAs


Each material layer has a length of 10 nm in the simulation.

The material layers 4), 5) and 6) vary its alloy contents linearly:


4)AlxGa1-xP             from 10 nm to 20 nm from x=0.0 to x=1.0

5)GaxIn1-xP             from 30 nm to 40 nm from x=0.0 to x=1.0

6)AlxIn1-xP              from 50 nm to 60 nm from x=1.0 to x=0.0


Refractive index  of  AlGaInP


Source: PAM-XIAMEN


For more information, please visit our website: www.semiconductorwafers.net,

send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.

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