Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our customers including many who are developing better and more reliable for Light emitting diodes of high brightness, Diode lasers (could reduce laser operating voltage), Quantum well structure, Solar cells (potential). Our AlGaInP has excellent properties, it’s a semiconductor, which means that its valence band is completely full. The eV of the band gap between the valence band and the conduction band is small enough that it is able to emit visible light (1.7eV – 3.1eV). The band gap of AlGaInP is between 1.81eV and 2eV. This corresponds to red, orange, or yellow light, and that is why the LEDs made from AlGaInP are those colors. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our AlGaInP layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved AlGaInP product line has benefited from strong tech,support from Native University and Laboratory Center. Now it shows an example as follows: 808nm laser structure Layer:0 Material:GaAs substrate Type:N Level(cm-3):3.00E+18 Layer:1 Material:GaAs Thickness(um):0.5 Type:N Level(cm-3):2.00E+18 Layer:2 Material:[AI(X)Ga]In(y)P X:0.3 Y:0.49 Strain tolerance(ppm):+/-500 Thickness(um):1 Type:N Level(cm-3):1.00E+18 Layer:3 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.5 Type:U/D Layer:4 Material:GaAs(x)P X:0.86 Strain tolerance(ppm):+/-500 PL(nm):798+/-3 Thickness(um):0.013 Type:U/D Layer:5 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.5 Type:U/D Layer:6 Material:[AI(x)Ga]In(y)P X:0.3 Y:0.49 Strain tolerance(ppm):+/-500 Thickness(um):1 Type:P Level(cm-3):1.00E+18 Layer:7 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.05 Type:P Level(cm-3):2.00E+18 Layer:8 Material:GaAs Thickness(um):0.1 Type:P Level(cm-3):>2.00E19 About Xiamen Powerway Advanced Material Co., Ltd Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN)is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About AlGaInP Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.)is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices,as it...
This image depicts the experimental setup, in which a tantalum sample is shock loaded by a laser and probed by an X-ray beam. The diffraction patterns, collected by an array of detectors, show the material undergoes twinning. The background illustration shows a lattice structure that has created twins. Credit: Ryan Chen/LLNL For the first time, scientists have reported in-situ diffraction experiments measuring deformation twinning at the lattice level during shock compression. The results were recently published in Nature by a team of researchers from Lawrence Livermore National Laboratory and collaborators from the University of Oxford, Los Alamos National Laboratory, the University of York and SLAC National Accelerator Laboratory. Shock compression is a challenging area of study, as it combines extreme conditions, such as high pressures and temperatures, with ultrafast timescales. To simplify the problem, scientists often assume that solid materials behave like a fluid, flowing and changing their shape (plasticity) without resistance. Yet, as a solid, most materials also retain a lattice structure. As a material flows, changing shape, somehow the lattice must change as well while still maintaining the regular pattern of the lattice. The study of plasticity at a most fundamental level then rests on understanding how the lattice is changing while a material is deforming. Dislocation-slip (where lattice dislocations are generated and move) and twinning (where sub-grains form with a mirror-image lattice) are the basic mechanisms of plastic deformation. Despite their fundamental importance to plasticity, diagnosing the active mechanism in-situ (during the shock) has been elusive. Previous research has studied the material after the fact (in “recovery”), which introduces additional complicating factors and has led to conflicting results. “In-situ diffraction experiments have been around for a few decades but have gained prominence only recently as high-powered lasers and X-ray free electron lasers have made the measurements more widely available, more sensitive and able to reach more extreme conditions,” said Chris Wehrenberg, LLNL physicist and lead author on the paper. “Our work highlights an untapped area of study, the distribution of signal within diffraction rings, which can yield important information.” The team’s experiments were conducted at the new Matter in Extreme Conditions end station, located at SLAC’s Linac Coherent Light Source, which represents the leading edge in a large, worldwide investment in facilities that can pair in-situ diffraction with high-pressure and high-strain rate techniques. “In these experiments, you launch a shock wave with a laser, where a jet of laser-heated plasma creates an opposing pressure in your sample, and probe the state of your sample with an X-ray beam,” Wehrenberg said. “The X-rays will scatter off the sample at specific angles, forming diffraction rings, and the scattering angle provides information o...
Abstract We describe techniques for performing photolithography and electron beam lithography in succession on the same resist-covered substrate. Larger openings are defined in the resist film through photolithography whereas smaller openings are defined through conventional electron beam lithography. The two processes are carried out one after the other and without an intermediate wet development step. At the conclusion of the two exposures, the resist film is developed once to reveal both large and small openings. Interestingly, these techniques are applicable to both positive and negative tone lithographies with both optical and electron beam exposure. Polymethyl methacrylate, by itself or mixed with a photocatalytic cross-linking agent, is used for this purpose. We demonstrate that such resists are sensitive to both ultraviolet and electron beam irradiation. All four possible combinations, consisting of optical and electron beam lithographies, carried out in positive and negative tone modes have been described. Demonstration grating structures have been shown and process conditions have been described for all four cases. Source:IOPscience For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
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