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Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

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Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

2018-12-11

Thermal management of high-power semiconductor lasers is of great importance since the output power and beam quality are affected by the temperature rise of the gain region. Thermal simulations of a vertical-external-cavity surface-emitting laser by a finite-element method showed that the solder layer between the semiconductor thin film consisting of the gain region and a heat sink has a strong influence on the thermal resistance and direct bonding is preferred to achieve effective heat dissipation. 


To realize thin-film semiconductor lasers directly bonded on a high-thermal-conductivity substrate, surface-activated bonding using an argon fast atom beam was applied to the bonding of gallium arsenide (GaAs Wafer) and silicon carbide wafer (SiC wafers). The GaAs or SiC structure was demonstrated in the wafer scale (2 in. in diameter) at room temperature. The cross-sectional transmission electron microscopy observations showed that void-free bonding interfaces were achieved.


source:iopscience


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