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Structure for InGaAs photodetectors

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Structure for InGaAs photodetectors

2015-12-13

We offer the wafer structure InGaAs photodetectors as follows:


Material

X

Thickness (nm)

Dopant

Doping concentration

InP

 

1000

N (Sulfur)

3E+16

In(x)GaAs

0.53

3000

U/D

5E+14

InP

 

500

N (Sulfur)

3E+16

Substrate

 

 

SI (Fe)

 


Source: semiconductorwafers.net


For more information, please visit our website:http://www.semiconductorwafers.net,

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