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PAM-XIAMEN Offers GaAs LED wafer

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PAM-XIAMEN Offers GaAs LED wafer

2018-05-14

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4”  is on mass production in 2010. This new product represents a natural addition to PAM-XIAMEN's product line.


Dr. Shaka, said, "We are pleased to offer GaAs LED epi wafer to our customers including many who are developing better and more reliable for Red Led. It includes algainp led structure with multi quantum well,including DBR layer for LED chip industry, wavelength range from 620nm to 780nm by MOCVD. Therein, AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our led epitaxy are natural by products of our ongoing efforts,  currently we are devoted to continuously develop more reliable products."

PAM-XIAMEN's improved algainp led structure product line has benefited from strong tech. support from Native University and Laboratory Center.

Now we show you specification as follows:


p-GaP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs/AlAs

Buffer

GaAs substrate


About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.


About GaAs

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others.


Some electronic properties of gallium arsenide are superior to those of silicon. It has a higher saturated electron velocity and higher electron mobility, allowing gallium arsenide transistors to function at frequencies in excess of 250 GHz. GaAs devices are relatively insensitive to overheating, owing to their wider energy bandgap, and they also tend to create less noise (disturbance in an electrical signal) in electronic circuits than silicon devices, especially at high frequencies. This is a result of higher carrier mobilities and lower resistive device parasitics. These superior properties are compelling reasons to use GaAs circuitry in mobile phones, satellite communications, microwave point-to-point links and higher frequency radar systems. It is also used in the manufacture of Gunn diodes for the generation of microwaves.


Another advantage of GaAs is that it has a direct band gap, which means that it can be used to absorb and emit light efficiently. Silicon has an indirect bandgap and so is relatively poor at emitting light.

As a wide direct band gap material with resulting resistance to radiation damage, GaAs is an excellent material for outer space electronics and optical windows in high power applications.


Because of its wide bandgap, pure GaAs is highly resistive. Combined with a high dielectric constant, this property makes GaAs a very good substrate for Integrated circuits and unlike Si provides natural isolation between devices and circuits. This has made it an ideal material for monolithic microwave integrated circuits, MMICs, where active and essential passive components can readily be produced on a single slice of GaAs.


Q&A

Q: I'm looking for red led epiwafer. Do you supply such products?

If yes, which wavelength, wafer size ?

A: You are welcome, your center ever ordered to us, and we also have received

hundreds of orders from universities in the world each year,

and now please see below: 4/ 2” Red LED epi-wafers 620+/-5nm

Q: Concerning the wavelength what is the range available.

Finally, what is the susbtrate material ? Do you have any data sheet.

Thank you in advance

A: It is 2“size, wavelength: 620+/-5nm. The substrate material is GaAs.

p-GaP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs/AlAs

Buffer

GaAs substrate

Q: I have a question, I understand that 620 nm is the only wavelength available?

A: 620nm is available, 445-475nm and 510-530nm is also avaible


Key Words: GaAs epi wafer, Red Led, AlGaInP, AlGaAs, AlAs,

GaAs substrate, epi wafer, epi wafers, epitaxial wafer manufacturers,

epi wafer supplier, gallium arsenide manufacturers, algainp bandgap,

algainp led, algaas band gap, algaas laser, mocvd, quantum well


For more information, please visit our website: http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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