Highlights

•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.

•The depletion region of structure is amended using a multiple recessed gate.

•A gate structure is proposed to be able to control the thickness of the channel.

•RF parameters are considered and are improved.

In this paper, a high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region using a multiple recessed gate (MRG–HEMT). The basic idea is to change the gate depletion region and a better distribution of the electric field in the channel and improve the device breakdown voltage. The proposed gate consists of lower and upper gate to control the channel thickness. Also, the charge of the depletion region will change due to the optimized gate. In addition, a metal between the gate and drain including the horizontal and vertical parts is used to better control the thickness of the channel. The breakdown voltage, maximum output power density, cut-off frequency, maximum oscillation frequency, minimum noise figure, maximum available gain (MAG), and maximum stable gain (MSG) are some parameters for designers which are considered and are improved in this paper.

A high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region.

Keywords

AlGaN/AlN/GaN/SiC HEMT;  Electric field;  Depletion region;  RF applications

Source:Sciencedirect

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