Home / News /

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

News

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

2018-08-01

Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.


Source:IOPscience


For more information, please visit our website: www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com



Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.