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Gallium Arsenide Wafer

Crystal Wafer

Gallium Arsenide Wafer

2018-05-30

Q: We would like to ask for below.


Gallium Arsenide Wafer, GaAs, VGF


(001) +/- 0.5o Orientation


N-Type, Silicon doped


Carrier Concentration: 1 – 4 x 1018 cm-3


EPD ≤ 5000 cm-2


1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched


US Semi Standard Flats, No Laser Markings


Individual spider style wafer cassettes, sealed in N2 gas, Class 1000 Cleanroom Packing, No labels inside of packing


50.8 mm (+/- 0.4 mm) diameter x ≤ 350 microns


A: We could supply for above GaAs wafer.


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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.