We provide wafer of N+ or P+ GaAs epi with AlAs layer on N+ or P+ GaAs substrate as follows:

No.1 spec:2-inch p+ GaAs Epi with AlAs layer on p+ GaAs substrate.

Structure(from bottom to top):

Layer0: 350 um p+ semi-conducting GaAs substrate, >E18 doping, any dopant type

Layer1: 300 nm p+ semi-conducting GaAs buffer layer, >E18 doping concentration, any dopant type

Layer2: 10 nm AlAs undoped (the AlAs layer must be grown using As2 [dimer] and NOT As4 [tetramer]),

Layer3:  2 um p+ semi-conducting GaAs epi layer, >E18 doping concentration, any dopant type

No.2 spec:  2-inch n+ GaAs Epi with AlAs layer on n+ GaAs substrate.

Structure(from bottom to top):

Layer0: 350 um n+ semi-conducting GaAs substrate, Si-doping with >E18 doping

Layer1: 300 nm n+ semi-conducting GaAs buffer layer, Si-doping with >E18 doping concentration

Layer2: 10 nm AlAs undoped (the AlAs layer must be grown using As2 [dimer] and NOT As4 [tetramer]),

Layer3: 2 um n+ semi-conducting GaAs epi layer, Si-doping with >E18 doping concentration

No.3 spec: 2-inch GaAs – AlAs two-barrier structure:

1 layer: contact, GaAs, carrier concentration 10e18 cm-3 , 100 nm

2 layer: spacer, GaAs, undoped, 10 nm

3 layer: barrier, AlAs, undoped, 2,3 nm

4 layer: quantum well, GaAs, undoped, 4,5 nm

5 layer: barrier, AlAs, undoped, 2 nm

6 layer: spacer, GaAs, undoped, 40 nm

7 layer: contact, GaAs, carrier concentration 10e18 cm-3 , 500 nm

No.4 spec:20nm undoped GaAs/10nm AlAs on  GaAs S.I. substrate (No DRAM, no SRAM, no memory chips – wafers only).

Anisotropy of the Thermal Conductivity in GaAs/AlAs Superlattices

We combine the transient thermal grating and time-domain thermoreflectance techniques to characterize the anisotropic thermal conductivities of GaAs/AlAs superlattices from the same wafer. The transient grating technique is sensitive only to the in-plane thermal conductivity, while time-domain thermoreflectance is sensitive to the thermal conductivity in the cross-plane direction, making them a powerful combination to address the challenges associated with characterizing anisotropic heat conduction in thin films. We compare the experimental results from the GaAs/AlAs superlattices with first-principles calculations and previous measurements of Si/Ge SLs. The measured anisotropy is smaller than that of Si/Ge SLs, consistent with both the mass-mismatch picture of interface scattering and with the results of calculations from density-functional perturbation theory with interface mixing included.

Source: semiconductorwafers.net

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