Highlights

•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.

•The strain energy is relieved by interfacial misfit dislocations observed by TEM.

•The type and separation of dislocations are consistent with theoretical prediction.

•InSb film is 98.9% relaxed and owns surface with roughness of 1.1 nm.

•InSb film shows 33,840 cm2/V s room temperature electron mobility

We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310 °C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm. ω−2θ scan results from x-ray diffraction measurement indicated that the  InSb layer is 98.9% relaxed. Images from the transmission electron microscope measurement showed a threading dislocation density of 1.38×108 cm−2. The formation of highly uniform interfacial misfit dislocation array was also observed and the separation of dislocations is consistent with theoretical calculation. The InSb layer exhibited a 33,840 cm2/V s room temperature electron mobility.

Keywords

Thin films;  Epitaxial Growth;  TEM;  Structural;  Semiconductors；GaAs wafer,InSb wafer

Source:Sciencedirect

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