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Detail Application of Silicon Carbide


Detail Application of Silicon Carbide


Detail Application of Silicon Carbide

Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations:

1.SiC substrate for X-ray monochromators: such as using SiC's large d-spacing of about 15 A

2.SiC substrate for high voltage devices

3.SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition

4.For silicon carbide p-n diode

5.SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a

wavelength of 1300 nm. It should have a low absorption coefficient and a low two photon absorption coefficient for 1300 nm

6.SiC substrate for heat spreader: For example,the Silicon carbide crystal will be capillary bonded on a flat gain chip surface of

VECSEL (Laser) to remove the generated pump heat. Therefore, the following properties are important:

1)Semi-insulating type required to prevent free carrier absorption of the laser light

2) Double side polished are preferred

3)Surface roughness:  < 2nm, so that the surface is enough flat for bonding

7.SiC substrate for THz system application: Normally it require THz transparency

8.SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on off axis substrate and on axis are both available,

surface side on C-face or Si face are both available.

9.SiC substrate for process development loke ginding, dicing and etc

10.SiC substrate for fast photo-electric switch

11.SiC substrate for heat sink: thermal conductivity and thermal expansion are concerned.

12.SiC substrate for laser: optical, surface and stranparence  are concerned.

13.SiC substrate for III-V epitaxy, normally off axis substrate are required.

Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate,

can give researchers suggestions in different application.


If you need more information about Detail Application of Silicon Carbide, please visit http://www.semiconductorwafers.net

or send us email at luna@powerwaywafer.com and powerwaymaterial@gmail.com

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