PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect...
In this paper we review the developments of producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method. The growth method and polishing results are described. We succeeded in producing 26 mm × 26 mm non- and semi-polar wafers. These wafers possess outstanding structural and optical properties, with threading dislocation density of the order of ...
The process to decrease the dislocation density in 3-inch Fe-doped InP wafers is described. The crystal growth process is a conventional liquid encapsulated Czochralsky (LEC) but thermal shields have been added in order to decrease the thermal gradient in the growing crystal. The shape of these shields has been optimized with the help of numerical simulations of heat transfer and thermomechanical ...
InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30$^{{}^\circ }$ compared to the GaAs base islands un...
This paper proposes a new three-dimensional (3D) photolithography technology for a high-resolution micropatterning process on a fiber substrate. A brief review on the lithography technology of the non-planar surface is also presented. The proposed technology mainly comprises the microfabrication of the 3D exposure module and the spray deposition of thin resist films on the fiber. The 3D exposure m...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
For homogeneous materials, the ultrasonic immersion method, associated with a numerical optimization process mostly based on Newton's algorithm, allows the determination of elastic constants for various synthetic and natural composite materials. Nevertheless, a principal limitation of the existing optimization procedure occurs when the considered material is at the limit of the homogeneous hypothe...
The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP substrate or Si substrate were successfully obtained. We have fabricated the InP substrate or Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP or InP double heterostructure layers on this I...