We report the generation of microdischarges in devices composed of microcrystalline diamond. Discharges were generated in device structures with microhollow cathode discharge geometries. One structure consisted of an insulating diamond wafer coated with boron-doped diamond layers on both sides. A second structure consisted of an insulating diamond wafer coated with metal layers on both sides. In e...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP substrate or Si substrate were successfully obtained. We have fabricated the InP substrate or Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP or InP double heterostructure layers on this I...
We have improved the efficiency of photoconductive antennas (PCAs) using low-temperature-grown GaAs (LT-GaAs). We found that the physical properties of LT-GaAs photoconductive layers greatly affect the generation and detection characteristics of terahertz (THz) waves. In THz generation, high photoexcited carrier mobility and the presence of a few As clusters in the LT-GaAs are two important factor...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...