(Gamma Scientific/ LEDinside) It can then be easily programmed to deliver virtually any arbitrary spectral power distribution of visible light, for example, reproducing the output of black body sources and various standard CIE illuminants, over a wide range of output luminance. This enables rapid automation for accurate characterization of detector dynamic range, uniformity, linearity and spectral responsivity, and also facilitates identification of pixel defects. The flexible and agile RS-7-4 offers numerous advantages over traditional calibration light sources for image sensor testing, such as tungsten halogen incandescent bulbs. For example, the LED-based RS‑7‑4 offers a substantially longer calibrated, stable lifetime than tungsten sources, which are notoriously unstable over their relatively brief operational lifetimes. Plus, the color temperature and spectral power distribution of the RS-7-4 can be rapidly varied through software control, and the output is extremely linear over its entire output range. None of this is true of tungsten bulbs. The RS-7-4 also delivers better performance than competitive LED-based systems. In particular, it utilizes a larger number of discrete LED channels to enable more accurate reproduction of a specific illuminant. It also uses highly stabilized DC drive current circuitry, rather than pulse width modulation (PWM), to vary output luminance. This is critical when testing high speed silicon detectors, which can easily time resolve PWM signals, thus causing measurement errors. Keywords:Gamma Scientific,tunable LED light,programmable light,image sensor testing, Source:ledinside For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
Mid-infrared light, which has a wavelength longer than visible light but shorter than microwaves, has many important applications in remote sensing and communication technologies. Researchers in Japan have demonstrated the successful operation of several new photonic components that can effectively guide the passage of mid-infrared light. The research may lead to a faster internet and sensitive detectors for important molecules like carbon dioxide. The team presents their results at the Optical Fiber Communication Conference and Exhibition (OFC), held March 20-24 in Anaheim, California, USA. The researchers built the new components from the material germanium (Ge). Like silicon, which is commonly used in conventional near-infrared photonics, germanium is a group IV semiconductor, which means it is in the same column of the periodic table and has similar electrical properties. Germanium has several properties that make it particularly well-suited to transmit and guide mid-infrared light, said Jian Kang, a Ph.D. candidate in the Takagi-Takenaka group in the Department of Electrical Engineering and Information Systems, University of Tokyo, Japan. Germanium has high optical transparency in the mid-infrared range so mid-infrared light can easily pass through it. Compared to silicon, germanium has a number of other optically interesting properties. These include a higher refractive index, which means light passes more slowly through it. Germanium also has a larger third-order nonlinearity, an optical effect that can be exploited to, for example, amplify or self-focus beams of light. It has a stronger free-carrier effect, which means charge carrying electrons and holes in the material can help modulate light. Germanium also has a stronger thermo-optic effect than silicon, which means the refractive index can be more easily controlled with temperature. “These properties could make Ge-based devices show higher performance or even realize new functionalities in the mid-infrared,” said Kang. Furthermore, recent progress on lasers made from strained-Ge and GeSn-based materials make germanium a promising material for integrating both the light producing and light steering components on the same photonic chip, Kang said. Kang and his colleagues designed and tested several fundamental photonic waveguide components made from germanium, including grating couplers, MMI couplers, and micro-ring resonators. Grating couplers are used to couple light efficiently from free space into a waveguide, and vice versa, MMI couplers are used as routers or couplers for light signal processing in the waveguide, and micro-ring resonators are used to filter certain wavelengths of light passing through. The biggest challenge the team faced was controlling the device fabrication process, including the polishing and etching of the germanium wafer, Kang said. “Currently, the Ge device performance may be not as good as state-of-the-art Si-based ones, because the study of Ge-based photo...
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAsP layer and other related products and services announced the new availability of size 2″-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer InAsP layer to our customers including many who are developing better and more reliable for the buried grating of distributed feedback (DFB) lasers. Our InAsP layer has excellent properties, the size of the InAsP layer can be controlled by the height of the corrugation, and the arsenic composition in the InAsP layer can be controlled by the AsH/sub 3/ partial pressure. The results of TEM, EDS and PL show that InP is suitable as the buffer layer between the InAsP layer and MQW active layer. Fabricated 1.3 /spl mu/m DFB lasers which have an InAsP layer as an absorptive grating have shown low threshold current and high slope efficiency from -40-+85/spl deg/C, and high reliability has been demonstrated. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InAsP layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved InAsP product line has benefited from strong tech. support from Native University and Laboratory Center. Now it shows an example as follows: x/y Doping carrier conc.[cm-3] Thickness[um] Wave length[um] Lattice mismatch InAs(y)P 0.25 none 5.00E+16 1.0 ﹣ ﹣ In(x)GaAs 0.63 none 1.00E+17 3.0 1.9 ﹣600<>600 InAs(y)P 0.25 S 1.00E+18 2.5 ﹣ ﹣ InAs(y)P 0.05>0.25 S 1.00E+18 4.0 ﹣ ﹣ InP ﹣ S 1.00E+18 0.25 ﹣ ﹣ About Xiamen Powerway Advanced Material Co., Ltd Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About InAsP Crystal growth and material characterization of InAsP strained quantum-well structures and its application to 1.3 um lasers were investigated in term of threshold current reduction and high temperature operation. Layer thickness fluctuation caused by the large elastic strain can be eliminated by decreasing growth temperature. Although temperature dependence of the threshold current is expected to be improved by large conduction band discontinuity of InAsP, small number of well due to the critical layer thickness compensates for the improvement. To avoid the problem, tensile-strained InGaP barriers as well as very thin InP intermediate layers were applied. The device with InAsP/InP/InGaP/InP triple quantum well as an active region ...
Imec large-area (70cm2) epitaxial solar cell with an efficiency of up to 16.3% on high-quality substrate. Imec scientists realized large-area (70cm2) epitaxial solar cells with efficiencies of up to 16.3% on high-quality substrates. And efficiencies of up to 14.7% were achieved on large-area low-quality substrates, showing the potential of thin-film epitaxial solar cells for industrial manufacturing. The results were achieved within imec’s silicon solar cell industrial affiliation program (IIAP) that explores and develops advanced process technologies aiming a sharp reduction in silicon use, whilst increasing cell efficiency and hence further lowering substantially the cost per Watt peak. Besides wafer-based bulk silicon solar cells imec aims at developing epitaxial thin-film (<20µm) silicon solar cells grown on low-cost silicon carriers within its silicon solar cell IIAP.. The epitaxial thin-film process on low-cost silicon carriers is generically similar to the bulk process and the epi-process can be implemented with limited equipment investment in an existing crystalline silicon solar cell manufacturing line. To improve the optical confinement of light in the active part of the cell, a buried porous Si reflector is developed. Imec realized 20μm thick high-quality epitaxial silicon stacks both on top of a highly-doped high-quality substrate and on a low-cost, UMG (upgraded metallurgic grade)-type, multi-crystalline Si substrate. The p+-type back surface field (BSF), the p-type base and the n-type front-side emitter were grown by chemical vapor deposition. The light-trapping scheme consists of plasma texturing of the front surface in combination with an internal porous silicon Bragg reflector positioned at the epitaxial/substrate interface. The cells on the high-quality substrate are contacted with copper plating. For the cells made on the low-quality substrates, the metallization is realized with screenprinting, which is the final step after the formation of the diffused front surface field (FSF) and the silicon nitride antireflection coating. In this way, the epitaxially grown ‘wafer equivalent’ substrates are fully compatible with standard industrial (bulk) solar cell processing. “These efficiencies of up to 16.3% on high-quality substrates and of up to14.7 % on low-cost substrates show that industrial-level efficiencies are within reach for this technology;” said Jef Poortmans, director imec energy/solar program. “By implementing copper-based contact schemes, we can further increase the efficiency making epitaxial thin-film silicon solar cells on low-cost wafers an interesting industrial technology.” Source:PHYS For more information,please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services announced the new availability of size 2-4″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer InP substrate to our customers including many who are developing better and more reliable for Fiber optics network components. Our InP substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient to be 1.6 × 10−3 for Fe in InP. Semi-insulating InP crystals with resistivity > 10^7 ohm—cm have been grown consistently from melts doped with 150 ppm Fe. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InP substrate are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved InP product line has benefited from strong tech. support from Native University and Laboratory Center. Now it shows an example as follows: Item Specification Unit Growth Method LEC - Conductivity Type n - Dopant Si - Carrier Density (1~6) x 1018 cm -3 Mobility 1200 ~ 2000 cm2▪ V-1 ▪ sec-1 Resistivity (0.6~6) x 10-3 Ω ▪ cm EPD ≤500 cm -2 Orientation (100) ± 0.2 degree Thickness 350 ± 10 μm TTV ≤ 2 μm Bow - μm Finish (surface) (Back) Mirror Polished (Etched) Mirror Polished (Etched) Individual N2 gas Package - Size (Diameter) 50 ± 0.1 mm Orientation Flat a) b) (0-1-1) ± 0.05 16 ± 2 degree mm Idex Flat a) b) (0-11) ± 2 7 ± 2 degree mm About Xiamen Powerway Advanced Material Co., Ltd Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About InP substrate Bulk polycrystalline InP(Indium Phosphide) is synthesized from the elements via a gradient freeze process. Hall data for a typical boule are Nd-Na= 4.7 × 1015/cm3 and Μ77 = 28,000 cm2/V-sec. Photoluminescence data indicate that zinc is present as an acceptor impurity in the polycrystalline InP and in nominally undoped LEC single crystals grown using the synthesized InP as charge material. For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier ofAlGaAs layer and other related products and services announced the new availability of size 2”-3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer AlGaAs layer to our customers including many who are developing better and more reliable for GaAs-based red- and near-infra-red-emitting (700 nm-1100 nm) double-hetero-structure laser diodes. Our AlGaAs layer has excellent properties, it’s used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (QWIP). The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our AlGaAs layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved AlGaAs product line has benefited from strong tech. support from Native University and Laboratory Center. Now it shows an example as follows: 3” AlGaAs/GaAs/AlGaAs on GaAs substrate thickness of each epilayer 1μm dopant density for GaAs layer 10^17-10^18 /cm3 Al_xGa_1-xAs stoichiometry x~0.3 About Xiamen Powerway Advanced Material Co., Ltd Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About AlGaAs Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 – this indicates an arbitrary alloy between GaAs and AlAs. The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The refractive index is related with the bandgap via the Kramers–Kronig relations and varies between 2.9 (x = 1) and 3.5 (x = 0). This allows the construction of Bragg mirrors used in VCSELs and RCLEDs. Q&A Q: I”m looking for some GaAs wafers with a custom epilayer stack of AlGaAs/GaAs/AlGaAs grown on top 2” and 3″ wafers with each epilayer having a thickness of order 1 micron Si-doped at Na in the range 10^17-10^18 /cm3 for both the GaAs and barrier layers, with Al_xGa_1-xAs stoichiometry x~0.3 A: Yes, it could be supplied Q: The quote you gave us was for a 220nm layer of GaAs on top with a 2µm thick Al_0...
SUSS MicroTec, a global supplier of equipment and process solutions for the semiconductor industry and related markets, has launched the LI Series – a new Surface Laser Imaging platform as pre- announced on May 4, 2016. The highly versatile technology of the LI for laser surface processing ranges from sub micrometric pattering of resist coated substrates to micro- ablation, photo-chemistry treatment as well as metrology. The patterns, defined by a CAD process, are transferred by accurately moving the targeted substrates underneath a focused and scanning laser beam. In addition, the Laser Imager configuration is highly customizable, to best fit the specific requirements of each user. The technology supports substrate sizes from small pieces up to 300 mm, and it reaches a resolution down to 0.8 µm. Multi-layer alignment is possible via both top and bottom side alignment optical systems. Beside the 405 nm GaN laser for standard thin resist lithography processes, a second laser source can also be added to additionally address diverse processes such as, among other, thick resists like SU8, and infrared sensitive materials. Core advantage of the Laser Imager is its flexibility, making it suitable for the various requirements of academic and industrial R&D facilities. The main applications include a wide variety of nano- and 3D structuring for high resolution wafer lithography, micro-optical components, sensors, microfluidic devices, and photo mask manufacturing. “With the Surface Laser Imaging platform, we add a tool to our product portfolio that expands our existing exposure equipment set towards higher resolution requirements for leading edge applications.” says Dr. Per-Ove Hansson, CEO of SUSS MicroTec AG. “With this addition, we are enhancing our leadership position and offering the most comprehensive set of products and technologies for the lithography R&D market.” Keywords:SUSS MicroTec GaN Laser Laser Imagers Source:LEDinside For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs and other related products and services announced the new availability of size 2”-3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer LT-GaAs epi layer to our customers including many who are developing better and more reliable for laser device. Our LT-GaAs epi layer has excellent properties, GaAs films with low-temperature GaAs (LT-GaAs) layers were grown by molecular beam epitaxy (MBE) method on vicinal Si substrates oriented 6°off towards [110]. The grown structures were different with the thickness of LT-GaAs layers and its arrangement in the film. Investigations of crystalline properties of the grown structures were carried out by the methods of f X-ray diffraction (XRD) and transmission electron microscopy (TEM). The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our LT-GaAs epi layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved LT-GaAs product line has benefited from strong tech. support from Native University and Laboratory Center. Now it shows an example as follows: 2″ LT-GaAs Wafer Specification Diameter(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime<15ps or <1ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing: Single side polished Substrate: GaAs substrate About Xiamen Powerway Advanced Material Co., Ltd Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About LT-GaAs Low-temperature GaAs is known from the literature [13,14] has a lattice constant larger than the lattice constant of high temperature GaAs. This is due to the adsorption of excess As at low temperatures. There are stresses at the interface of LT-GaAs / GaAs due to the difference in lattice parameters. To reduce the accumulated stress the presence of misfit dislocations lying in the interface is required. The most profitable way to the formation of such misfit dislocations is bending the existing threading dislocations, the so-called process without activation. On the TEM images can be seen that in the annealed samples with a 700 nm LT-GaAs layer the dislocations are partly bent along the interface of LT-GaAs/GaAs (figure 2 (b)) and in the samples without annealing the dislocations are changing its direction of propagation at th...
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