Low Temperature GaAs (LT-GaAs)Experimental Results,We offer LT-GaAs/GaAs, please download LT-GaAs test result below: http://www.semiconductorwafers.net/low-temperature-gaas-test-report/
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs Epi wafer and other related products and services announced the new availability of size 2″-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer GaAs Epi wafer to our customers including many who are developing better and more reliable for Vertical-cavity surface-emitting laser. Our GaAs Epi wafer has excellent properties. VCSELs for wavelengths from 650 nm to 1300 nm are typically based on gallium arsenide (GaAs) wafers with DBRs formed from GaAs and aluminium gallium arsenide (AlxGa(1-x)As). The GaAs–AlGaAs system is favored for constructing VCSELs because the lattice constant of the material does not vary strongly as the composition is changed, permitting multiple “lattice-matched” epitaxial layers to be grown on a GaAs substrate. However, the refractive index of AlGaAs does vary relatively strongly as the Al fraction is increased, minimizing the number of layers required to form an efficient Bragg mirror compared to other candidate material systems. Furthermore, at high aluminium concentrations, an oxide can be formed from AlGaAs, and this oxide can be used to restrict the current in a VCSEL, enabling very low threshold currents. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our GaAs Epi wafer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved GaAs Epi product line has benefited from strong technology, which is supported from Native University and Laboratory Center. Now it shows an example as follows: 1.2-inch n+ GaAs Epi with AlAs layer on n+ GaAs substrate, specification as below: Top Layer: 2 um n+ semi-conducting GaAs epi layer, Si-doping with >E18 doping concentration Second Layer: 10 nm AlAs undoped (the AlAs layer must be grown using As2 [dimer] and NOT As4 [tetramer]), Third Layer: 300 nm n+ semi-conducting GaAs buffer layer, Si-doping with >E18 doping concentration Bottom Layer: 350 um n+ semi-conducting GaAs substrate, Si-doping with >E18 doping 2.2-inch p+ GaAs Epi with AlAs layer on p+ GaAs substrate, specification as below: The required structure is listed from top to bottom: Top Layer: 2 um p+ semi-conducting GaAs epi layer, >E18 doping concentration, any dopant type Second Layer: 10 nm AlAs undoped (the AlAs layer must be grown using As2 [dimer] and NOT As4 [tetramer]), Third Layer: 300 nm p+ semi-conducting GaAs buffer layer, >E18 doping concentration, any dopant type Bottom Layer: 350 um p+ semi-conducting GaAs substrate, >E18 doping, any dopant type About Xiamen Powerway Advanced Material Co., Ltd Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufa...
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our customers including many who are developing better and more reliable for red-light emitting devices. Our GaAsP material has excellent properties, as uniform in composition and/or uniform in external quantum efficiency. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our GaAsP materialare natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved GaAsP product line has benefited from strong tech. support from Native University and Laboratory Center. Now it shows an example as follows: Wafer parameters Conductionn type n-type Resistivity,Onm*cm 0.008 Orientation (100) Disoriention (1-3)° Epitaxial layer GaAsP Conductionn type n-type Dopant Te Carrier concentration,cm-3 (0,2-3,0)*10^17 Photoluminescence wavelength,nm 645-673 Epi-layer thickness,um ≥30 Epi-structure thickness,um 360-600 Area,cm^2 ≥6,5 About Xiamen Powerway Advanced Material Co., Ltd Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About GaAsP Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with nitrogen (GaAsP:N). For more information, please visit our website: http://www.semiconductorwafers.net,send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAs wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer InGaAs wafer to our customers including many who are developing better and more reliable for infrared detector and HEMT devices using InGaAs channels. Our InGaAs wafer has excellent properties, single crystal epitaxial films of InGaAs can be deposited on a single crystal substrate of III-V semiconductor having a lattice parameter close to that of the specific gallium indium arsenide alloy to be synthesized. Three substrates can be used: GaAs, InAs and InP. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InGaAs wafer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved InGaAs product line has benefited from strong technology, which is supported from Native University and Laboratory Center. Now it shows an example as follows: x/y Doping carrier conc.[cm-3] Thickness[um] Wave length[um] Lattice mismatch InAs(y)P 0.25 none 5.00E+15 1.0 ﹣ ﹣ In(x)GaAs 0.63 none <3.0e15 3.0 1.9 ﹣600<>600 InAs(y)P 0.25 S 1.00E+18 2.5 ﹣ ﹣ InAs(y)P 0.05>0.25 S 1.00E+18 4.0 ﹣ ﹣ InP ﹣ S 1.00E+18 0.25 ﹣ ﹣ substrate:InP S 4.30E+18 ~350 About Xiamen Powerway Advanced Material Co., Ltd Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About InGaAs Wafer Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide) is a ternary alloy (chemical compound) of indium, gallium and arsenic. Indium and gallium are both from boron group (group III) of elements while arsenic is a pnictogen (group V) element. Thus alloys made of these chemical groups are referred to as “III-V” compounds. Because they are from the same group, indium and gallium have similar roles in chemical bonding. InGaAs is regarded as an alloy of gallium arsenide and indium arsenide with properties intermediate between the two depending on the proportion of gallium to indium. InGaAs is a semiconductor with applications in electronics and optoelectronics About Q& A Q: Graded InAsP buffer layer (typ. 1-5um), n+ doped, what is the doping concentration.: 0.1-1.0e18 A: no problem Q: InGaAs layer, 2-3um – 1.9um cutoff what is the exact thickness? 3.0um A: no problem Q: InAsP layer, 0.5-1um – ...
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer InGaAsN wafer to our customers including many who are developing better and more reliable for laser diode. The photoluminescence properties of InGaAsN quantum wells were examined as a method of improving the performance of GaAs-based 1300 nm lasers. Among the parameters that significantly affect the quality of this material, growth temperature and In/N ratio of the alloy have particularly profound effects. Substantially lower growth temperatures than normally used for GaAs or InGaAs materials appear to enhance the quality of this alloy, while In fractions of 0.3-0.35 result in an acceptable compromise between quantum well strain and optical quality. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InGaAsN wafer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.” PAM-XIAMEN’s improved InGaAsN product line has benefited from strong technology, which is supported from Native University and Laboratory Center. Now it shows an example as follows: layer doping thickness (um) other GaAs undoped ~350 wafer substrate InGaAsN* undoped 0.15 band gap <1 eV Al(0.3)Ga(0.7)As undoped 0.50 GaAs undoped 2.00 Al(0.3)Ga(0.7)As undoped 0.50 About Xiamen Powerway Advanced Material Co., Ltd Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications. Please contact us for more product information or discuss a specific epi layer structure. About InGaAsN Wafer Indium gallium arsenide nitride, a novel semiconductors. Single layers and multiple quantum wells made of InGaAsN were investigated. It was found that some nitrogen can be incorporated in InGaAs, but the nitrogen incorporation is apparently limited to very low nitrogen concentrations (^0.2%). This concentration is not enough to reach a emission wavelength of 1.3 /zm. For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com....
EpiGaN n.v., a worldwide provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16- 18, 2017) as ell as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). At PCIM Europe 2017, EpiGaN will exhibit in Hall 6, Booth 432. (Image: EpiGaN) Drawing on its leading technology position in advanced GaN-on-Si and GaN-on-SiC materials for highperformance power switching and RF power devices for millimeter-wave applications, EpiGaN is leading the way to define epi-wafer material quality for device properties that cut conversion losses and increase reliability. With its cost-efficient GaN-on-Si technology, EpiGaN has enabled path braking innovations in 650V power management and RF power systems, such as scaling GaN/Si technology up to 200mm for economies of scale to enter the mainstream CMOS manufacturing lines of Si-based IDMs and foundries. EpiGaN has taken up and successfully mastered this manufacturing challenge and developed 200mm versions of its HV650V and HVRF GaN-on-Si epiwafers. Among the distinctive achievements of EpiGaN’s HV650V RF power products are good dynamic behavior for power devices and lowest RF losses (<0.5dB/mm up to 50GHz) for the HVRF product family. An important competitive advantage and key concept of EpiGaN’s GaN/Si epi-wafer technology is the in-situ SiN capping layer. This special feature, as pioneered by EpiGaN, provides superior surface passivation and device reliability, and it enables the contamination-free processing in existing standard Si-CMOS production infrastructures. In-situ SiN structuring also allows the use of pure AlN layers as barrier materials, which results in lower conduction losses and/or allows the design of smaller-size chips for the same current rating. “GaN technology has begun to enter many applications, either in power switching or in RF power amplification,” says EpiGaN cofounder and CEO Dr Marianne Germain. “We supply industry-leading 200mm GaN-on-Si epi-wafers to the global semiconductor industry, and we are particularly proud to have developed GaN-on-Si epi-wafers that show the lowest RF loss up to 100GHz. This is a timely answer to the increasing demands in wireless communication such as the introduction of 5G and the Internet of Things.” At PCIM Europe, Dr Germain will participate in a high-ranking panel discussion “GaN – Design, EMC and Measurement” at the Fach Forum, organized by Bodo’s Power Systems (May 17). Dr Markus Behet, EpiGaN CMO, will give a presentation entitled “From Hype to Reality: GaN/Si – Where Are We Today?” at the PCIM Europe Exhibitor Forum (May 18) and the CSMantech Exhibitor Forum (May 23). Keywords: EpiGaN;GaN-on-Si;GaN-on-SiC ;EPI wafers Source:LEDinside For more information, please visit ou...
Despite graphene’s amazing properties and all the engineering that has gone into giving the wonder material a band gap, its prospects for digital logic remain as much in doubt as they have ever been. Illustration: MIT In order to grow semiconductors with minimal defects on top of silicon, the most important requirement is to ensure that the size of the crystal lattice of the film to be grown is similar to the crystal lattice of silicon, sometimes referred to as lattice matching. Unfortunately, germanium atoms are a lot larger than silicon atoms, so if you were to grown pure germanium crystals on top of silicon, the difference in the size of crystal lattice would cause lots of defects in the germanium crystals. In this latest approach, GaAs is grown on graphene can be transferred to a silicon substrate. “We have essentially created a stack of single-crystalline GaAs film on top of a single-crystalline silicon substrate. This how we intend to marry [compound semiconductors] with” silicon, says Kim. One of the biggest requirements for any technology to be adopted by industry is to demonstrate large-scale processing. The current challenge for the MIT team is to scale the graphene transfer process with high yield. “There are certain areas where graphene coverage is not ideal, we want to be able to offer industries large-scale high quality graphene transfer of single-crystalline graphene,” adds Kim. The researchers are continuing to improve the growth and exfoliation process of these compound semiconductor films, but they are more interested in creating heterostructural devices—monolithically integrated devices made of dissimilar semiconductors. To date that has been difficult to realize because of the issue of “lattice matching” in tradition epitaxy processes. Kim adds: “We are designing and fabricating novel devices by stacking dissimilar semiconductors on top of each. We ultimately want to amalgamate all the unique and highly advantageous properties of multiple semiconductors into one device.” Keywords: MIT compound, semiconductors III-V, indium phosphide, epitaxy , wafers, graphene, gallium arsenide, indium gallium arsenide Source: IEEE For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers. (Image: X-FAB Silicon Foundries) Exagan and X-FAB have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment and process recipes. Combined with the use of 200-mm wafers, this will significantly lower the cost of mass producing GaN-on-silicon devices. By enabling greater power integration than silicon ICs, GaN devices can improve the efficiency and reduce the cost of electrical converters, which will accelerate their adoption in applications including electrical vehicle charging stations, servers, automobiles and industrial systems. (Image: Exagan) The new GaN-on-silicon devices have been built using substrates fabricated at Exagan’s 200-mm epi-manufacturing facility in Grenoble, France. These epi wafers meet the physical and electrical specifications to produce Exagan’s 650-volt G-FET™ devices as well as the tight requirements for compatibility with CMOS manufacturing lines. The industry’s previous work with GaN had been limited to 100-mm and 150-mm wafers due to the challenges of layering GaN films on silicon substrates. Exagan’s G-Stack™ technology enables GaN-on-silicon devices to be manufactured more cost effectively on 200-mm substrates by depositing a unique stack of GaN and strain-management layers that relieves the stress between GaN and silicon layers. The resulting devices have been shown to exhibit high breakdown voltage, low vertical leakage and high-temperature operation. “This is a major milestone in our company’s development as we accelerate product development and qualification,” said Frédéric Dupont, president and CEO of Exagan. “It demonstrates the combined strengths of our epi material, X-FAB’s wafer fab process and our device design capabilities. It also confirms the success of our vertically integrated fab-lite model, with expertise from materials to devices and applications. It’s perfect timing to establish GaN technology and products on the most competitive 200-mm platform just as GaN power products are getting broad traction in IT server, consumer electronics and automotive markets.” “We have high confidence in Exagan’s leadership team and product performance roadmap,” said Rudi De Winter, CEO of X-FAB. “Through this productive partnership, X-FAB is leveraging its resources and expertise to bring Exagan’s technology into manufacturing and provide the power conversion market with a reliable supply...
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