Q:After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q:For pss wafer, the light comes out from the p-GaN side not from sapphire, so I can't do flipchip packaging. Also I don't know whether laser liftoff is possible for pss wafer. A:LED light is sourcing from mqw light, emitting in all directions, p-GaN is positive(front side), it will naturally light, also each backside will light.At the bottom of the sapphire is also light, and then through the reflected light from other angles,see below: upper image is the traditional LED packing. down image is flipchip packing.
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters? A:According to our XRD data, all the three In concentration(10%,20%,30%), there is a peak at ~34.5 degree. A PL spectrum is preferred as attached.
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A:Sure.
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare the two directly? A:Sure.