808nm laser structure
|
Layer |
Material |
X |
Y Strain tolerance |
PL |
Thickness |
Type |
Level |
|
|
|
|
|
|
(ppm) |
(nm) |
(um) |
|
(cm-3) |
|
8 |
GaAs |
|
|
|
|
0.1 |
P |
>2.00E19 |
|
7 |
GaIn(x)P |
0.49 |
|
+/-500 |
|
0.05 |
P |
|
|
6 |
[Al(x)Ga]In(y)P |
0.3 |
0.49 |
+/-500r |
|
1 |
P |
|
|
5 |
GaIn(x)P |
0.49 |
|
+/-500 |
|
0.5 |
U/D |
|
|
4 |
GaAs(x)P |
0.86 |
|
+/-500 |
798 |
0.013 |
U/D |
|
|
3 |
GaIn(x)P |
0.49 |
|
+/-500 |
|
0.5 |
U/D |
|
|
2 |
[Al(x)Ga]In(y)P |
0.3 |
0.49 |
+/-500 |
|
1 |
N |
|
|
1 |
GaAs |
|
|
|
|
0.5 |
N |
|
|
0 |
GaAs substrate |
|
|
|
|
|
N |
|
C: We can offer test report of PL of MQW and XRD of AlGaInP.
Key Words: Quantum Well Laser, Al Free, laser structure, MQW laser,
Quantum Well Laser Applications, working of quantum well laser,
single quantum well laser, Quantum Well Laser
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
